cystech electronics corp. spec. no. : c912f3 issued date : 2016.10.05 revised date : page no. : 1/9 MTE3D5N06F3 cystek product specification n-channel enhancement mode power mosfet MTE3D5N06F3 features ? simple drive requirement ? fast switching characteristic ? rohs compliant package symbol outline ordering information device package shipping MTE3D5N06F3-0-t7-x to-263 (pb-free lead plating and rohs compliant package) 800 pcs / tape & reel to-263 MTE3D5N06F3 g gate d drain s source bv dss 60v i d @v gs =10v, t c =25 c 80a 3.6m r dson(typ) @ v gs =10v, i d =30a 3.8m r dson(typ) @ v gs =7v, i d =20a g d s environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t7 : 800 pcs / tape & reel, 13? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c912f3 issued date : 2016.10.05 revised date : page no. : 2/9 MTE3D5N06F3 cystek product specification absolute maximum ratings (t c =25 c, unless otherwise noted) parameter symbol limits unit drain-source voltage v ds 60 gate-source voltage v gs 30 v continuous drain current @ t c =25 c(silicon limit) 143 continuous drain current @ t c =100 c(silicon limit) 101 continuous drain current @ t c =25 c(package limit) (note 1) i d 80 pulsed drain current (note 3) i dm 480 continuous drain current @ t a =25 c (note 2) 15.4 continuous drain current @ t a =70 c (note 2) i dsm 12.3 avalanche current (note 3) i as 30 a avalanche energy @ l=100 h, i d =30a, r g =25 (note 2) e as 45 mj t c =25 c (note 1) 188 power dissipation t c =100 c (note 1) p d 94 t a =25 c (note 2) 2 power dissipation t a =70 c (note 2) p dsm 1.3 w operating junction and storage temperature tj, tstg -55~+175 c thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 0.8 thermal resistance, junction-to-ambient, max, (note 2) r th,j-a 62.5 c/w note : 1 . the power dissipation p d is based on t j(max) =175 c, using junction-to-case thermal resistance, and is more useful in setting the upper di ssipation limit for cases where additional heatsinking is used. 2 . the value of r ja is measured with the device mounted on 1 in 2 fr-4 board with 2 oz. copper, in a still air environment with t a =25 c. the power dissipation p dsm is based on r ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user?s specific board design, and the maximum temperature of 175 c may be used if the pcb allows it. 3 . pulse width limited by junction temperature t j(max) =175 c. ratings are based on low frequency and low duty cycles to keep initial t j =25 c. 4 . the static characteristics are obtained using <300 s pulses, duty cycle 0.5% maximum. 5. the r ja is the sum of thermal resistance from junction to case r jc and case to ambient.
cystech electronics corp. spec. no. : c912f3 issued date : 2016.10.05 revised date : page no. : 3/9 MTE3D5N06F3 cystek product specification characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 60 - - v gs =0v, i d =250 a v gs(th) 2.0 - 4.0 v v ds = v gs , i d =250 a g fs - 46 - s v ds =5v, i d =20a i gss - - 2 100 na v gs = 2 30v - - 1 v ds =60v, v gs =0v i dss - - 25 a v ds =60v, v gs =0v, tj=125 c - 3.6 4.8 v gs =10v, i d =30a *r ds(on) - 3.8 5.0 m v gs =7v, i d =20a dynamic *qg - 68.3 - *qgs - 11 - *qgd - 28 - nc i d =30a, v ds =30v, v gs =10v *t d(on) - 24 - *tr - 25.2 - *t d(off) - 56.2 - *t f - 17.8 - ns v ds =30v, i d =30a, v gs =10v, r g =1 ciss - 2919 - coss - 585 - crss - 270 - pf v gs =0v, v ds =25v, f=1mhz rg - 1.1 - f=1mhz source-drain diode *i s - - 80 *i sm - - 480 a *v sd - 0.81 1.2 v i s =30a, v gs =0v *trr - 28.7 - ns *qrr - 26.2 - nc i f =30a, v gs =0v, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c912f3 issued date : 2016.10.05 revised date : page no. : 4/9 MTE3D5N06F3 cystek product specification typical characteristics typical output characteristics 0 50 100 150 200 250 300 012345 v ds , drain-source voltage(v) i d , drain current(a) 10v 5v 5.5v v gs =4.5v 6 v 9v 8v 7 v 6.5v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 1 10 100 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =7v 10v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 04812162 i dr , reverse drain current(a) v sd , source-drain voltage(v) 0 tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 10 20 30 40 50 60 70 80 90 100 024681 0 drain-source on-state resistance vs junction tempearture 0 0.4 0.8 1.2 1.6 2 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =30a v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =30a r ds( on) @tj=25c :3.6m typ
cystech electronics corp. spec. no. : c912f3 issued date : 2016.10.05 revised date : page no. : 5/9 MTE3D5N06F3 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 100 1000 10000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss normalizedthreshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 200 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 i d , drain current(a) g fs , forward transfer admittance(s) v ds =5v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 0 1020304050607080 total gate charge---qg(nc) v gs , gate-source voltage(v) v ds =30v i d =30a v ds =12v v ds =48v maximum safe operating area 0.1 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-source voltage(v) i d , drain current(a) dc 10ms 100ms 1ms 100 s r ds( on) limit t c =25c, tj=175, v gs =10v r jc =0.8c/w, single pulse 10 s maximum drain current vs case temperature 0 20 40 60 80 100 120 140 160 25 50 75 100 125 150 175 200 t c , case temperature(c) i d , maximum drain current(a) v gs =10v, r jc =0.8c/w silicon limit package limit
cystech electronics corp. spec. no. : c912f3 issued date : 2016.10.05 revised date : page no. : 6/9 MTE3D5N06F3 cystek product specification typical characteristics(cont.) typical transfer characteristics 0 50 100 150 200 250 300 0246810 v gs , gate-source voltage(v) i d , drain current (a) v ds =10v single pulse maximum power dissipation 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0.0001 0.001 0.01 0.1 1 10 pulse width(s) power (w) t j(max) =175c t c =25c r jc =0.8c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r jc (t)=r(t)*r jc 2.duty factor, d=t 1 /t 2 3.t jm -t c =p dm *r jc (t) 4.r jc =0.8 c/w
cystech electronics corp. spec. no. : c912f3 issued date : 2016.10.05 revised date : page no. : 7/9 MTE3D5N06F3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c912f3 issued date : 2016.10.05 revised date : page no. : 8/9 MTE3D5N06F3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
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